CCD area image sensor

S10140/S10141 series

s Absolute maximum ratings (Ta=25 °C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Operating temperature

Topr

-50

-

+30

°C

Storage temperature

Tstg

-50

-

+70

°C

OD voltage

-0.5

-

+30

V

RD voltage

-0.5

-

+18

V

ISV voltage

-0.5

-

+18

V

ISH voltage

-0.5

-

+18

V

IGV voltage

-10

-

+15

V

IGH voltage

-10

-

+15

V

SG voltage

-10

-

+15

V

OG voltage

-10

-

+15

V

RG voltage

-10

-

+15

V

TG voltage

-10

-

+15

V

Vertical clock voltage

-10

-

+15

V

Horizontal clock voltage

-10

-

+15

V

s Operating conditions (MPP mode, Ta=25 °C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Output transistor drain voltage

-

24

-

V

Reset drain voltage

-

12

-

V

Output gate voltage

-

3

-

V

Substrate voltage

-

0

-

V

Test point (vertical input source)

-

-

V

Test point (horizontal input source)

-

-

V

Test point (vertical input gate)

-9

-8

0

V

Test point (horizontal input gate)

-9

-8

0

V

High

-

3

-

Vertical shift register

clock voltage

Low

-

-8

-

V

High

-

5

-

Horizontal shift register

clock voltage

Low

-

-8

-

V

High

-

5

-

Summing gate voltage

Low

-

-8

-

V

High

-

5

-

Reset gate voltage

Low

-

-8

-

V

High

-

3

-

Transfer gate voltage

Low

-

-8

-

V

s Electrical characteristics (Ta=25 °C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Signal output frequency

fc

-

250

500

kHz

-

3600

-

pF

-

150

-

pF

Summing gate capacitance

-

30

-

pF

Reset gate capacitance

-

30

-

pF

Transfer gate capacitance

-

75

-

pF

CTE

0.99995

0.99999

-

-

Vout

12

17

18

V

Zo

-

8

-

k

Ω

P

-

4

-

mW

*2: S10140-1108, S10141-1108S

*3: Charge transfer efficiency per pixel, measured at half of the full well capacity.

*4: The values depend on the load resistance. (Typical, VOD=24 V, Load resistance=100 k

Ω)

*5: Power consumption of the on-chip amplifier

2