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TPS601AF датащи(PDF) 2 Page - Toshiba Semiconductor |
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TPS601AF датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() TPS601A(F) 2007-10-01 2 Opto −Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Dark current ID (ICEO) VCE = 30V, E = 0 ― 0.01 0.2 μA TPS601A (F) 100 ― ― TPS601A (A,F) 100 ― 300 TPS601A (B,F) 200 ― 600 Light current IL VCE = 3V E = 0.1mW / cm 2 (Note) TPS601A (C,F) 400 ― 1200 μA Collector −emitter saturation voltage VCE (sat) IC = 30 μA, E = 0.1mW / cm 2 (Note) ― 0.25 0.4 V rise time tr ― 2 ― Switching time fall time tf VCC = 5V, IC = 10mA RL = 100Ω ― 2 ― μs Peak sensitivity wavelength λP ― 800 ― nm Half value angle θ 2 1 ― ±10 ― ° Note: Color temperature = 2870K, standard tungsten lamp. Precaution Please be careful of the followings. 1. Soldering temperature: 260°C max. Soldering time: 5s max. (Soldering portion of lead: Above 1.5mm from the body of the device.) 2. If the lead is formed, the lead should be formed at a distance of 2mm from the body of the device. Soldering shall be performed after lead forming. Product Indication Monthly production lot Letter color : Red Production year(last digit of A.D. is indicated) S601A・ Production month (Jan-Dec are indicated by alphabets of A-L) Model name |
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