TPCP8601

2004-12-10

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

TPCP8601

High-Speed Switching Applications

DC-DC Converter Applications

Strobo Flash Applications

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−20

V

Collector-emitter voltage

−20

V

Emitter-base voltage

−7

V

DC (Note 1)

−4.0

Collector current

Pulse (Note 1 )

−7.0

A

Base current

−0.5

A

t = 10s

3.3

Collector power

dissipation (t = 10s)

DC

Pc (Note 2)

1.3

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Ensure that the junction temperature does not exceed 150°C during

use of this device.

Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

Note 3: ● on the lower left of the marking indicates Pin 1.

* Weekly code (three digits):

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3V1A

Weight: 0.017 g (typ.)

Week of manufacture

(01 for the first week of the year, continuing up to 52 or 53)

Year of manufacture

(lowest-order digit of the calendar year)

Figure 1.

Circuit Configuration

(Top View)

Figure 2. Marking

(Note 3)

Type

Lot No.

(weekly code)

0.33±0.05

-0.11

-0.12

0.475

0.65

A

2.9±0.1

4

1

5

8

0.8±0.05

0.17±0.02

B

B

A

S

0.025

S

-0.12

-0.11

1.Collector

2.Collector

3.Collector

4.Base

5.Emitter

6.Collector

7.Collector

8.Collector

8

7

6

5

*

8601

1

2

3

4

1　 2　 3　 4

8　 7 　6 　 5