TPCP8301

2006-11-17

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS

Ⅳ)

TPCP8301

Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

• Lead (Pb)-free

• Small footprint due to small and thin package

Characteristic

Symbol

Rating

Unit

Drain-source voltage

−20

V

−20

V

Gate-source voltage

±12

V

DC

(Note 1)

−5

Drain current

Pulse

(Note 1)

−20

A

Single-device operation

(Note 3a)

1.48

Drain power

dissipation

(t

= 5 s) (Note 2a) Single-device value at

dual operation (Note 3b)

1.23

Single-device operation

(Note 3a)

0.58

Drain power

dissipation

(t

= 5 s) (Note 2b) Single-device value at

dual operation (Note 3b)

0.36

W

Single-pulse avalanche energy

(Note 4)

6.5

mJ

Avalanche current

−5

A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

0.12

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: For Notes 1 to 6, see the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

Circuit Configuration

Unit: mm

1. Source1

5. Drain2

2. Gate1

6. Drain2

3. Source2

7. Drain1

4. Gate2

8. Drain1

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-3V1G

Weight: 0.017 g (typ.)

0.33±0.05

-0.11

-0.12

0.475

0.65

A

2.9±0.1

4

1

5

8

0.8±0.05

0.17±0.02

B

B

A

S

0.025

S

-0.12

-0.11

8301

1

2

3

4

8

7

6

5

※

Lot No.

1

2

3

4

8

7

6

5