TPCP8H02 datasheet(3/8 Pages) TOSHIBA

номер детали	TPCP8H02

подробное описание детали	TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type

PDF	8 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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3 / 8 page

TPCP8H02

2006-11-13

MOS FET

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0

⎯

Drain-source breakdown voltage

V(BR)DSS

ID = 0.1 mA, VGS = 0

⎯

Drain cut-off current

IDSS

VDS = 20 V, VGS = 0

⎯

Gate threshold voltage

V th

VDS = 3V, ID = 0.1mA

0.6

⎯

1.1

Forward transfer admittance

｜

Yfs｜

VDS = 3V, ID = 10mA

⎯

ID = 10mA , VGS = 4V

⎯

1.5

ID = 10mA , VGS = 2.5V

⎯

2.2

Drain-source ON-resistance

RDS(ON)

ID = 1mA , VGS = 1.5V

⎯

5.2

Input capacitance

Ciss

⎯

9.3

⎯

Reverse transfer capacitance

Crss

⎯

4.5

⎯

Output capacitance

Coss

VDS = 3V, VGS = 0, f=1MHz

⎯

9.8

⎯

Turn-on time

ton

⎯

Switching time

Turn-off time

toff

See Figure 2 circuit diagram.

VDD ≒ 3V, RL = 300 Ω

VGS = 0 to 2.5V

⎯

125

⎯

Precautions

Vth can be expressed as the voltage between gate and source when the low operating current value is ID=100 μA for

this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a

lower voltage than Vth.

(The relationship can be established as follows: VGS (off) < Vth < VGS (on))

Please take this into consideration when using the device. The VGS recommended voltage for turning on this

product is 2.5 V or higher.

Figure 2 Switching Time Test Circuit & Timing Chart

Vout

VDD

Vin

10us

2.5V

Gate Pulse Width 10μs, tr, tf<5ns

(Zout=50Ω), Common Source, Ta=25°C

Duty Cycle<1%

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