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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TPCP8F01 датащи(PDF) 3 Page - Toshiba Semiconductor |
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TPCP8F01 датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 8 page  TPCP8F01 2006-11-13 3 Electrical Characteristics (Ta = 25°C) Transistor Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −30 V, IE = 0 ⎯ ⎯ −100 nA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ⎯ ⎯ −100 nA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −20 ⎯ ⎯ V hFE (1) VCE = −2 V, IC = −0.5 A 200 ⎯ 500 DC current gain hFE (2) VCE = −2 V, IC = −1.6 A 100 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −1.6 A, IB = −53 mA ⎯ ⎯ −0.19 V Base-emitter saturation voltage VBE (sat) IC = −1.6 A, IB = −53 mA ⎯ ⎯ −1.10 V Collector Output Capacitance Cob VCB = −10 V, IE = 0, f = 1MHz ⎯ 28 ⎯ pF Rise time tr ⎯ 70 ⎯ Storage time tstg ⎯ 150 ⎯ Switching time Fall time tf See Figure 3 circuit diagram VCC ∼− −12 V, RL = 7.5 Ω −IB1 = IB2 = −53 mA ⎯ 40 ⎯ ns Figure 3. Switching Time Test Circuit & Timing Chart MOS FET Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = −10 V, VDS = 0 ⎯ ⎯ ±1 μ A Drain-source breakdown voltage V (BR) DSS ID = 0.1 mA, VGS = 0 20 ⎯ ⎯ V Drain cut-off current IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μ A Gate Threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.6 ⎯ 1.1 V Forward Transfer Admittance |Yfs| VDS = 3 V, ID = 10 mA 40 ⎯ ⎯ mS ID = 10 mA, VGS = 4.0 V ⎯ 1.5 3 ID = 10 mA, VGS = 2.5 V ⎯ 2.2 4 Drain-source ON resistance RDS(ON) ID = 1 mA, VGS = 1.5 V ⎯ 5.2 15 Ω Input capacitance Ciss ⎯ 9.3 ⎯ Reverse transfer capacitance Crss ⎯ 4.5 ⎯ Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 9.8 ⎯ pF Turn-on time ton ⎯ 70 ⎯ Switching time Turn-off time toff VDD ∼− −3 V, RL = 300 Ω VGS = 0 to 2.5V ⎯ 125 ⎯ ns Figure 4. Switching Time Test Circuit & Timing Chart Precautions Vth can be expressed as voltage between gate and source when low operating current value is ID = 100μA for this product. For normal switching operation, VGS(ON) requires higher voltage than Vth snd VGS(OFF) requires lower voltage than Vth. (relationship can be established as follows: VGS(OFF) ＜ Vth ＜ VGS(ON)) Please take this into consideration for using the device. VGS recommended voltage of 2.5V or higher to turn on this product. I B1 20us I B2 IB1 IB2 Vin Vout RL VCC Duty Cycle<1% Rg Vout RL VDD Vin 10us 2.5V 0 Gate Pulse Width 10us, tr,tf<5ns (Zout=50ohm),Common Source,Ta=25°C Duty Cycle<1% |
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