TPCF8101 datasheet(2/7 Pages) TOSHIBA

номер детали	TPCF8101

подробное описание детали	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

PDF	7 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 7 page

TPCF8101

2006-11-16

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±8 V, VDS = 0 V

⎯

±10

μA

Drain cut-off current

IDSS

VDS = −12 V, VGS = 0 V

⎯

−10

μA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−12

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = 8 V

−4

⎯

Gate threshold voltage

Vth

VDS = −10 V, ID = −200 μA

−0.5

⎯

−1.2

RDS (ON)

VGS = −1.8 V, ID = −1.5 A

⎯

RDS (ON)

VGS = −2.5 V, ID = −3.0 A

⎯

Drain-source ON resistance

RDS (ON)

VGS = −4.5 V, ID = −3.0 A

⎯

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −3.0 A

⎯

Input capacitance

Ciss

⎯

1600

⎯

Reverse transfer capacitance

Crss

⎯

260

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

335

⎯

Rise time

⎯

Turn-on time

ton

⎯

Fall time

⎯

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 μs

⎯

Total gate charge

(gate-source plus gate-drain)

⎯

18.0

⎯

Gate-source charge

Qgs

⎯

14.5

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− −10 V, VGS = −5 V,

ID = −6.0 A

⎯

3.5

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

IDRP

⎯

−24

Forward voltage (diode)

VDSF

IDR = −6.0 A, VGS = 0 V

⎯

1.2

VDD ∼− −6 V

−5 V

VGS

0 V

ID = −3.0 A

VOUT

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