поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

AP2280 датащи(PDF) 4 Page - Diodes Incorporated

номер детали AP2280
подробное описание детали  SINGLE CHANNEL SLEW RATE CONTROLLED LOAD SWITCH
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

AP2280 датащи(HTML) 4 Page - Diodes Incorporated

  AP2280 Datasheet HTML 1Page - Diodes Incorporated AP2280 Datasheet HTML 2Page - Diodes Incorporated AP2280 Datasheet HTML 3Page - Diodes Incorporated AP2280 Datasheet HTML 4Page - Diodes Incorporated AP2280 Datasheet HTML 5Page - Diodes Incorporated AP2280 Datasheet HTML 6Page - Diodes Incorporated AP2280 Datasheet HTML 7Page - Diodes Incorporated AP2280 Datasheet HTML 8Page - Diodes Incorporated AP2280 Datasheet HTML 9Page - Diodes Incorporated  
Zoom Inzoom in Zoom Outzoom out
 4 / 9 page
background image
AP2280
SINGLE CHANNEL SLEW RATE CONTROLLED LOAD
SWITCH
AP2280 Rev. 2
4 of 9
OCTOBER 2007
www.diodes.com
© Diodes Incorporated
Recommended Operating Conditions
Symbol
Parameter
Min
Max
Units
VIN
Input voltage
1.5
6.0
V
IOUT
Output Current (Note 4)
0
2.0
A
TA
Operating Ambient Temperature
-40
85
°C
Note:
4. Maximum output current depends on application conditions. Please refer to the application note section.
(TA = 25
oC, V
IN = VEN = 5.0V, unless otherwise stated)
Symbol
Parameters
Test Conditions
Min
Typ.
Max
Unit
IQ
Input Quiescent Current
VEN = VIN, IOUT = 0
0.004
1
μA
ISHDN
Input Shutdown Current
VEN = 0V, OUT open
0.004
1
μA
ILEAK
Input Leakage Current
VEN = 0V, OUT grounded
0.01
1
μA
VIN = 5.0V
80
m
VIN = 3.3V
92
m
VIN = 1.8V
150
m
RDS(ON)
Switch on-resistance
VIN = 1.5V
200
m
VIL
EN Input Logic Low Voltage
VIN = 1.5V to 6V
0.4
V
VIN > 2.7V
2.0
V
VIH
EN Input Logic High Voltage
VIN = 1.5V to 2.7V
1.4
V
ISINK
EN Input leakage
VEN = 5V
1
μA
TD(ON)
Output turn-on delay time
Rload=10Ω
1
μS
AP2280-1, Rload = 10Ω
100
150
μS
TON
Output turn-on rise time
AP2280-2, Rload = 10Ω
1000 1500
μS
TD(OFF)
Output turn-off delay time
Rload = 10Ω
0.4
1
μS
RDISCH
Discharge FET on-resistance
VEN = GND
20
40
θ
JA
Thermal Resistance Junction-to-Ambient
SOT25 (Note 5)
160
oC/W
θ
JC
Thermal Resistance Junction-to-Case
SOT25 (Note 5)
38
oC/W
Note:
5. Test condition for SOT25: Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
Electrical Characteristics



Html Pages

1 2 3 4 5 6 7 8 9


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com