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FS3KMA-5A датащи(PDF) 4 Page - Powerex Power Semiconductors |
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FS3KMA-5A датащи(HTML) 4 Page - Powerex Power Semiconductors |
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4 / 4 page ![]() Jan. 2000 MITSUBISHI Nch POWER MOSFET FS3KMA-5A HIGH-SPEED SWITCHING USE PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = 1mA 0 1.0 2.0 3.0 4.0 5.0 –50 0 50 100 150 VDS = 10V ID = 1mA 0 1.0 2.0 3.0 4.0 5.0 0 0.8 1.6 2.4 3.2 4.0 TC = 25 °C 75 °C 125 °C VGS = 0V Pulse Test 10–1 100 2 3 5 7 101 2 3 5 7 –50 0 50 100 150 VGS = 10V ID = 1/2ID Pulse Test GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE CHARGE Qg (nC) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE VSD (V) CHANNEL TEMPERATURE Tch ( °C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch ( °C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) CHANNEL TEMPERATURE Tch ( °C) 0 4 8 12 16 20 02468 10 VDS = 50V 200V 100V TCh = 25 °C ID = 3A 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 10–423 5 7 23 5 7 23 5 7 23 5 7 100 23 5 7 101 23 5 7 102 10–3 10–2 10–1 D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM tw D = T tw T |
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