FS30SM-3 datasheet(2/4 Pages) POWEREX

2 / 4 page

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS30SM-3

HIGH-SPEED SWITCHING USE

100

200

100

150

0.4

0.8

1.2

1.6

2.0

VGS = 20V

10V 7V

TC = 25°C

Pulse Test

POWER DISSIPATION DERATING CURVE

CASE TEMPERATURE TC (°C)

MAXIMUM SAFE OPERATING AREA

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

DRAIN-SOURCE VOLTAGE VDS (V)

100

101

102

101 2102

35 7

103

35 7

2 3

tw = 10

100

1ms

10ms

TC = 25°C

Single Pulse

100ms

012345

VGS = 20V 10V

TC = 25°C

Pulse Test

PD = 70W

PERFORMANCE CURVES

ELECTRICAL CHARACTERISTICS (Tch = 25

°C)

V (BR) DSS

IGSS

IDSS

VGS (th)

rDS (ON)

VDS (ON)

yfs

Ciss

Coss

Crss

td (on)

td (off)

VSD

Rth (ch-c)

trr

µA

Ω

°C/W

150

—

2.0

—

3.0

1.02

2300

320

130

110

1.0

—

110

—

±0.1

0.1

4.0

1.38

—

1.5

1.78

—

Drain-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Reverse recovery time

Symbol

Unit

Parameter

Test conditions

Limits

Min.

Typ.

Max.

ID = 1mA, VGS = 0V

VGS =

±20V, VDS = 0V

VDS = 150V, VGS = 0V

ID = 1mA, VDS = 10V

ID = 15A, VGS = 10V

ID = 15A, VDS = 10V

VDS = 10V, VGS = 0V, f = 1MHz

VDD = 80V, ID = 15A, VGS = 10V, RGEN = RGS = 50

Ω

IS = 15A, VGS = 0V

Channel to case

IS = 30A, dis/dt = –100A/

µs

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