NXP Semiconductors

Product specification

Silicon N-channel dual gate MOS-FET

BF992

APPLICATIONS

• VHF applications such as VHF television tuners and FM

tuners with 12 V supply voltage. The device is also

suitable for use in professional communications

equipment.

DESCRIPTION

Depletion type field-effect transistor in a plastic

micro-miniature SOT143B package with source and

substrate interconnected.

The transistor is protected against excessive input voltage

surges by integrated back-to-back diodes between gates

and source.

PINNING

CAUTION

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

PIN

SYMBOL

DESCRIPTION

1

s, b

source

2

d

drain

gate 2

gate 1

Fig.1

Simplified outline (SOT143B) and symbol.

Marking code:

%MB.

handbook, halfpage

s,b

d

g

1

g

2

43

2

1

Top view

MAM039

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

drain-source voltage (DC)

−

20

V

drain current (DC)

−

40

mA

total power dissipation

−

200

mW

forward transfer admittance

25

−

mS

input capacitance at gate 1

4

−

pF

reverse transfer capacitance

30

−

fF

F

noise figure

1.2

−

dB

operating junction temperature

−

150

°C

Rev. 04 - 21 November 2007

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