GD50FSA120L2SF datasheet(4/9 Pages) STARPOWER

4 / 9 page

GD50FSA120L2SF

IGBT Module

7/31/2024

4/9

B01

Diode Characteristics T

H=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Diode Forward

Voltage

IF=50A,VGE=0V,Tvj=25

1.60

2.05

IF=50A,VGE=0V,Tvj=125

1.65

IF=50A,VGE=0V,Tvj=150

1.65

Recovered Charge

VR=600V,IF=50A,

-di/dt=1166A/μs,LS=35nH,

VGE=-15V,Tvj=25

4.96

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

1.67

Recovered Charge

VR=600V,IF=50A,

-di/dt=1032A/μs,LS=35nH,

VGE=-15V,Tvj=125

8.66

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

3.24

Recovered Charge

VR=600V,IF=50A,

-di/dt=1014A/μs,LS=35nH,

VGE=-15V,Tvj=150

9.21

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

3.46

NTC Characteristics T

H=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

∆R/R

Deviation of R100

TC=100

oC,R100=493.3Ω

-5

P25

Power

Dissipation

20.0

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

Module Characteristics T

H=25

oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

RCC’+EE’

Module Lead Resistance,Terminal to Chip

4.50

mΩ

RthJH

Junction-to-Heatsink (per IGBT)

Junction-to-Heatsink (per Diode)

1.050

1.600

K/W

Mounting Force Per Clamp

Weight of Module

GD50FSA120L2SF датащи(PDF) 4 Page - StarPower Europe AG

GD50FSA120L2SF датащи(HTML) 4 Page - StarPower Europe AG

Html Pages

1 2 3 4 5 6 7 8 9

датащи скачать

ссылки URL