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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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GD35FSY120L2S датащи(PDF) 4 Page - StarPower Europe AG |
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GD35FSY120L2S датащи(HTML) 4 Page - StarPower Europe AG |
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4 / 9 page  GD35FSY120L2S IGBT Module ©2016 STARPOWER Semiconductor Ltd. 6/28/2016 4/9 SX0A Diode-inverter Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VF Diode Forward Voltage IF=35A,VGE=0V,Tj=25 oC 2.00 2.45 V IF=35A,VGE=0V,Tj=125 oC 1.90 IF=35A,VGE=0V,Tj=150 oC 1.88 Qr Recovered Charge VR=600V,IF=35A, -di/dt=1050A/ μs,V GE=-15V Tj=25 oC 1.9 μC IRM Peak Reverse Recovery Current 43 A Erec Reverse Recovery Energy 1.01 mJ Qr Recovered Charge VR=600V,IF=35A, -di/dt=1050A/ μs,V GE=-15V Tj=125 oC 3.1 μC IRM Peak Reverse Recovery Current 51 A Erec Reverse Recovery Energy 2.37 mJ Qr Recovered Charge VR=600V,IF=35A, -di/dt=1050A/ μs,V GE=-15V Tj=150 oC 3.5 μC IRM Peak Reverse Recovery Current 53 A Erec Reverse Recovery Energy 2.77 mJ NTC Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit R25 Rated Resistance 5.0 k Ω ∆R/R Deviation of R100 TC=100 oC,R 100=493.3 Ω -5 5 % P25 Power Dissipation 20.0 mW B25/50 B-value R2=R25exp[B25/50(1/T2- 1/(298.15K))] 3375 K B25/80 B-value R2=R25exp[B25/80(1/T2- 1/(298.15K))] 3411 K B25/100 B-value R2=R25exp[B25/100(1/T2- 1/(298.15K))] 3433 K Module Characteristics T C=25 oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit LCE Stray Inductance 25 nH RCC’+EE’ Module Lead Resistance,Terminal to Chip 4.50 m Ω RthJC Junction-to-Case (per IGBT-inverter) Junction-to-Case (per Diode-inverter) 0.453 0.786 0.498 0.865 K/W RthCH Case-to-Heatsink (per IGBT-inverter) Case-to-Heatsink (per Diode-inverter) Case-to-Heatsink (per Module) 0.548 0.952 0.058 K/W F Mounting Force Per Clamp 20 50 N G Weight of Module 24 g |
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