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GD35FSX120L2S датащи(PDF) 3 Page - StarPower Europe AG |
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GD35FSX120L2S датащи(HTML) 3 Page - StarPower Europe AG |
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3 / 9 page ![]() GD35FSX120L2S IGBT Module ©2020 STARPOWER Semiconductor Ltd. 8/5/2020 3/9 A02 IGBT Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VCE(sat) Collector to Emitter Saturation Voltage IC=35A,VGE=15V, Tj=25 oC 1.75 2.20 V IC=35A,VGE=15V, Tj=125 oC 2.00 IC=35A,VGE=15V, Tj=150 oC 2.05 VGE(th) Gate-Emitter Threshold Voltage IC=1.40mA,VCE=VGE, Tj=25 oC 5.6 6.2 6.8 V ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25 oC 1.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25 oC 400 nA RGint Internal Gate Resistance 0 Ω Cies Input Capacitance VCE=25V,f=1MHz, VGE=0V 3.62 nF Cres Reverse Transfer Capacitance 0.10 nF QG Gate Charge VGE=-15…+15V 0.27 μC td(on) Turn-On Delay Time VCC=600V,IC=35A, RG=12Ω,VGE=±15V, Tj=25 oC 22 ns tr Rise Time 11 ns td(off) Turn-Off Delay Time 235 ns tf Fall Time 112 ns Eon Turn-On Switching Loss 1.62 mJ Eoff Turn-Off Switching Loss 1.96 mJ td(on) Turn-On Delay Time VCC=600V,IC=35A, RG=12Ω,VGE=±15V, Tj=125 oC 22 ns tr Rise Time 14 ns td(off) Turn-Off Delay Time 289 ns tf Fall Time 166 ns Eon Turn-On Switching Loss 2.48 mJ Eoff Turn-Off Switching Loss 2.84 mJ td(on) Turn-On Delay Time VCC=600V,IC=35A, RG=12Ω,VGE=±15V, Tj=150 oC 22 ns tr Rise Time 15 ns td(off) Turn-Off Delay Time 303 ns tf Fall Time 196 ns Eon Turn-On Switching Loss 2.70 mJ Eoff Turn-Off Switching Loss 3.14 mJ ISC SC Data tP≤10μs,VGE=15V, Tj=150 oC,VCC=900V, VCEM≤1200V 140 A |
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