FS22SM-9 datasheet(2/4 Pages) POWEREX

2 / 4 page

Feb.1999

300

200

150

100

250

200

150

100

PD = 275W

TC = 25°C

Pulse Test

VGS =

20V

10V

102

101

100

10–1

23 5 7 101 23 5 7 102 23 5 7 103 2

tw=10µs

1ms

100ms

100µs

TC = 25°C

Single Pulse

10ms

1020304050

VGS = 20V

10V

TC = 25°C

Pulse Test

PD =

275W

POWER DISSIPATION DERATING CURVE

CASE TEMPERATURE TC (°C)

MAXIMUM SAFE OPERATING AREA

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

DRAIN-SOURCE VOLTAGE VDS (V)

MITSUBISHI Nch POWER MOSFET

FS22SM-9

HIGH-SPEED SWITCHING USE

V (BR) DSS

V (BR) GSS

IGSS

IDSS

VGS (th)

rDS (ON)

VDS (ON)

yfs

Ciss

Coss

Crss

td (on)

td (off)

VSD

Rth (ch-c)

µA

Ω

°C/W

450

±30

—

7.0

—

0.19

2.1

10.0

2800

300

270

1.5

—

±10

0.24

2.6

—

2.0

0.45

ID = 1mA, VGS = 0V

IG =

±100µA, VDS = 0V

VGS =

±25V, VDS = 0V

VDS = 450V, VGS = 0V

ID = 1mA, VDS = 10V

ID = 11A, VGS = 10V

ID = 11A, VDS = 10V

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 200V, ID = 11A, VGS = 10V, RGEN = RGS = 50

Ω

IS = 11A, VGS = 0V

Channel to case

ELECTRICAL CHARACTERISTICS (Tch = 25

°C)

Drain-source breakdown voltage

Gate-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Symbol

Unit

Parameter

Test conditions

Limits

Min.

Typ.

Max.

PERFORMANCE CURVES

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