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MMBT6520L датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали MMBT6520L
подробное описание детали  isc Silicon PNP Power Transistor
PDF  3 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MMBT6520L датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

  MMBT6520L Datasheet HTML 1Page - Inchange Semiconductor Company Limited MMBT6520L Datasheet HTML 2Page - Inchange Semiconductor Company Limited MMBT6520L Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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2
isc Silicon PNP Power Transistor
MMBT6520L
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCEO
Collector-Emitter Sustaining Voltage
IC=-1mA, Ib=0
-350
--
--
V
VCBO
Collector-Base Sustaining Voltage
IC=-1mA, Ib=0
-350
--
--
V
VEBO
Emitter-Base Sustaining Voltage
IC=-1mA, Ib=0
-5
--
--
V
ICBO
Collector Cutoff Current
VCB= -250V; IE= 0
--
--
-50
nA
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
--
--
-50
nA
hFE-1
DC Current Gain
IC= -1mA; VCE= -10V
20
--
--
hFE-2
DC Current Gain
IC= -10mA; VCE= -10V
30
--
--
hFE-3
DC Current Gain
IC= -30mA; VCE= -10V
30
--
200
hFE-4
DC Current Gain
IC= -50mA; VCE= -10V
20
--
200
hFE-5*
DC Current Gain
IC= -100mA; VCE= -10V
15
--
--
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -10mA; IB= -1.0mA
--
--
-0.3
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -20mA; IB= -2.0mA
--
--
-0.35
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= -30mA; IB= -3.0mA
--
--
-0.50
V
VCE(sat)-4*
Collector-Emitter Saturation Voltage
IC= -50mA; IB= -5.0mA
--
--
-1.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= -10mA; IB= -1.0mA
--
--
-0.75
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= -20mA; IB= -2.0mA
--
--
-0.85
V
VBE(sat)-3*
Base-Emitter Saturation Voltage
IC= -30mA; IB= -3.0mA
--
--
-0.90
V
VBE(ON)
Base-Emitter On Voltage
IC= -100mA; VCE= -10V
--
--
2.0
V
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%



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