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GD10FSX65L4S датащи(PDF) 1 Page - StarPower Europe AG |
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GD10FSX65L4S датащи(HTML) 1 Page - StarPower Europe AG |
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1 / 9 page ![]() GD10FSX65L4S IGBT Module ©2018 STARPOWER Semiconductor Ltd. 10/29/2018 1/9 Preliminary STARPOWER SEMICONDUCTOR IGBT GD10FSX65L4S 650V/10A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology Low switching loss 6 μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 oC Fast & soft reverse recovery anti-parallel FWD Isolated heatsink using DBC technology Typical Applications Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic |
Аналогичный номер детали - GD10FSX65L4S |
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Аналогичное описание - GD10FSX65L4S |
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