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Dated : 07/02/2003
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
LL700, LL700A
SILICON EPITAXIAL PLANAR TYPE
SCHOTTKY BARRIER DIODES
for Ordinary Wave Detection
for Super High Speed Switching
Features
•
Low forward rise voltage (VF) and satisfactory wave
•
detection efficiency (
η)
•
Small temperature coefficient of forward characteristic
•
Extremely low reverse current IR
Absolute Maximum Ratings (Ta = 25
oC)
Parameter
Symbol
Rating
Unit
LL700
15
Reverse Voltage (DC)
LL700A
VR
30
V
LL700
15
Peak Reverse Voltage
LL700A
VRM
30
V
Forward Current (DC)
IF
30
mA
Peak Forward Current
IFM
150
mA
Junction Temperature
Tj
125
OC
Storage Temperature Range
TS
-55 to +125
OC
Characteristics at Ta = 25
oC
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VF1
IF = 1mA
-
-
0.4
Forward Voltage (DC)
VF2
IF = 30mA
-
-
1
V
LL700
VR = 15V
-
-
100
Reverse
Current (DC)
LL700A
IR
VR = 30V
-
-
150
nA
Terminal Capacitance
Ct
VR = 1V, f = 1MHz
-
1.3
-
pF
Reverse Recovery Time*
trr
IF = IR = 10mA
Irr = 1mA, RL = 100Ω
-
1
-
ns
Detection Efficiency
η
Vin = 3V(peak), f = 30MHz
RL = 3.9kΩ, CL = 10pF
-
60
-
%
Note: (1) Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
Note: (1) the charge of a human body and the leakage of current from the operating equipment.
Note: (2) Rated input / output frequency: 2,000MHz.
Note: (3) *: trr measuring instrument
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