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5

TVS Diode Arrays

SP721

Electronic Protection Array for ESD and Overvoltage Protection

Absolute Maximum Ratings

Continuous Supply Voltage, (V+) - (V-). ........................ +35V

Forward Peak Current, IIN to VCC , IIN to GND

(Refer to Figure 6). .................................±2A, 100µs

ESD Ratings and Capability (Figure 1, Table 1)

Load Dump and Reverse Battery (Note 2)

Thermal Information

Thermal Resistance (Typical, Note 1)

θJA (

o

C/W)

PDIP Package . ...........................................160

SOIC Package . ..........................................170

(SOIC Lead Tips Only)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Operating Voltage Range,

-

2 to 30

-

V

Forward Voltage Drop

IN to V-

IN to V+

-

-

2

2

-

-

V

V

Input Leakage Current

-20

5

+20

nA

Quiescent Supply Current

-

50

200

nA

Equivalent SCR ON Threshold

Note 3

-

1.1

-

V

Equivalent SCR ON Resistance

-

1

-

Ω

Input Capacitance

-3-

pF

Input Switching Speed

-2-

ns

NOTES:

2. In automotive and battery operated systems, the power supply lines should be externally protected for load dump and reverse battery. When the

V+ and V- Pins are connected to the same supply voltage source as the device or control line under protection, a current limiting resistor should

be connected in series between the external supply and the SP721 supply pins to limit reverse battery current to within the rated maximum

limits. Bypass capacitors of typically 0.01µF or larger from the V+ and V- Pins to ground are recommended.

3. Refer to the Figure 3 graph for definitions of equivalent “SCR ON Threshold” and “SCR ON Resistance”. These characteristics are given here

for thumb-rule information to determine peak current and dissipation under EOS conditions.

ESD Capability

ESD capability is dependent on the application and defined test standard.The

evaluation results for various test standards and methods based on Figure 1

are shown in Table 1.

For the “Modified” MIL-STD-3015.7 condition that is defined as an “in-circuit”

method of ESD testing, the V+ and V- pins have a return path to ground and

the SP721 ESD capability is typically greater than 15kV from 100pF through

1.5kΩ. By strict definition of MIL-STD-3015.7 using “pin-to-pin” device testing,

the ESD voltage capability is greater than 6kV. The MIL-STD-3015.7 results

were determined from AT&T ESD Test Lab measurements.

The HBM capability to the IEC 61000-4-2 standard is greater than 15kV

for air discharge (Level 4) and greater than 4kV for direct discharge

(Level 2). Dual pin capability (2 adjacent pins in parallel) is well in excess

of 8kV (Level 4).

For ESD testing of the SP721 to EIAJ IC121 Machine Model (MM) standard,

the results are typically better than 1kV from 200pF with no series resistance.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device

at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. θJA is measured with the component mounted on an evaluation PC board in free air.

H.V.

SUPPLY

±VD

IN

DUT

CD

R1

IEC 1000-4-2: R150 to 100MΩ

RD

CHARGE

SWITCH

DISCHARGE

SWITCH

MIL-STD-3015.7: R 11 to 10MΩ

FIGURE 1. ELECTROSTATIC DISCHARGE TEST

STANDARD

TYPE/MODE

MIL-STD-3015.7 Modified HBM

1.5kΩ 100pF 15kV

Standard HBM

1.5kΩ 100pF

6kV

IEC 61000-4-2

HBM, Air Discharge

330Ω 150pF 15kV

HBM, Direct Discharge

330Ω 150pF

4kV

HBM, Direct Discharge,

Two Parallel Input Pins

330Ω 150pF

8kV

EIAJ IC121

Machine Model

0kΩ

200pF

1kV

TABLE 1. ESD TEST CONDITIONS