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FS10UMA-5A датащи(PDF) 2 Page - Powerex Power Semiconductors |
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FS10UMA-5A датащи(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 2 page ![]() PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. Sep.1998 V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) MITSUBISHI Nch POWER MOSFET FS10UMA-5A HIGH-SPEED SWITCHING USE V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W 250 — — 2.0 — — — — — — — — — — — — — — — 3.0 0.40 2.00 9.0 950 90 25 20 25 150 40 0.95 — — ±10 1 4.0 0.52 2.60 — — — — — — — — — 2.27 ELECTRICAL CHARACTERISTICS (Tch = 25°C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol Unit Parameter Test conditions Limits Min. Typ. Max. ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50 Ω IS = 5A, VGS = 0V Channel to case |
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