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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRL1404ZPBF датащи(PDF) 2 Page - International Rectifier |
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IRL1404ZPBF датащи(HTML) 2 Page - International Rectifier |
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2 / 13 page  IRL1404Z/S/LPbF 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.066mH, RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. This is only applied to TO-220AB package. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. TO-220 device will have an Rth value of 0.65°C/W. S D G S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage40 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.034 ––– V/°C ––– 2.5 3.1 RDS(on) Static Drain-to-Source On-Resistance ––– ––– 4.7 m Ω ––– ––– 5.9 VGS(th) Gate Threshold Voltage1.4 ––– 2.7 V gfs Forward Transconductance 120 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 75 110 Qgs Gate-to-Source Charge ––– 28 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 40 ––– td(on) Turn-On Delay Time –––19––– tr Rise Time ––– 180 ––– td(off) Turn-Off Delay Time –––30––– ns tf Fall Time –––49––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 5080 ––– Coss Output Capacitance ––– 970 ––– Crss Reverse Transfer Capacitance ––– 570 ––– pF Coss Output Capacitance ––– 3310 ––– Coss Output Capacitance ––– 870 ––– Coss eff. Effective Output Capacitance ––– 1280 ––– Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 180 (Body Diode) A ISM Pulsed Source Current ––– ––– 720 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 2639ns Qrr Reverse Recovery Charge ––– 18 27 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 4.5V, ID = 40A e VGS = 5.0V, ID = 40A e VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 32V, ƒ = 1.0MHz VDS = 10V, ID = 75A ID = 75A VGS = 16V VGS = -16V VDS = 32V VGS = 5.0V e VDD = 20V ID = 75A RG = 4.0Ω TJ = 25°C, IS = 75A, VGS = 0V e TJ = 25°C, IF = 75A, VDD = 20V di/dt = 100A/µs e Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 75A e VDS = VGS, ID = 250µA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C MOSFET symbol showing the integral reverse p-n junction diode. Conditions VGS = 5.0V e VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 32V f |
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