TIP121 datasheet(1/1 Pages) TEL

номер детали	TIP121

подробное описание детали	Plastic-Encapsulated Transistors

PDF	1 Pages

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производитель	TEL [TRANSYS Electronics Limited]

домашняя страница	http://www.transyselectronics.com

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TO-220 Plastic-Encapsulated Transistors

TIP120, 121, 122 Darlington TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

2

W (Tamb=25

℃)

Collector current

ICM:

5

A

Collector-base voltage

V(BR)CBO:

TIP120:

60

V

TIP121:

80

V

TIP122:

100 V

Operating and storage junction temperature range

TJ, Tstg:

-65

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

TIP120

Collector-base breakdown voltage

TIP121

TIP122

V(BR)CBO

Ic= 1mA, IE=0

60

80

100

V

TIP120

Collector-emitter breakdown voltage

TIP121

TIP12

V(BR)CEO

Ic= 100mA, IB=0

60

80

100

V

TIP120

Collector cut-off current

TIP121

TIP122

ICBO

VCB= 60V, IE=0

VCB= 80V, IE=0

VCB= 100V, IE=0

0.2

uA

TIP120

Collector cut-off current

TIP121

TIP122

ICEO

VCE=30V, IB=0

VCE=40V, IB=0

VCE=50V, IB=0

0.5

uA

Emitter cut-off current

IEBO

VEB= 5V, IC=0

2

mA

DC current gain

hFE

VCE= 3V, IC= 0.5A

VCE= 3V, IC= 3 A

1000

Collector-emitter saturation voltage

VCE(sat)

IC=3 A, IB=12 mA

IC=5 A, IB=20 mA

2

4

V

Base-emitter ON voltage

VBE(on)

VCE=3V, IC= 3 A

2.5

V

1 2 3

TO-220

1. BASE

2. COLLECTOR

3. EMITTER

Transys

Electronics

LI M ITE D

Аналогичный номер детали - TIP121

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