Characteristic

Test Conditions

Min.

Typ.

Max. Unit

Prelim. 4/94

1 2 3

3.05 (0.120)

2.54 (1.000)

10.67 (0.420)

9.65 (0.380)

5.33 (0.210)

4.83 (0.190)

4.83 (0.190)

3.56 (0.140)

1.40 (0.020)

0.51 (0.055)

3.73 (0.147)

3.53 (0.139) Dia.

1.78 (0.070)

0.99 (0.390)

1.02 (0.040)

0.38 (0.015)

2.54 (0.100)

No m.

5.08 (0.200)

No m.

0.66 (0.026)

0.41 (0.016)

2.92 (0.115)

2.03 (0.080)

2

TO220–AC Package Outline.

Dimensions in mm (inches)

Drain – Source Voltage

Continuous Drain Current

Gate – Source Voltage

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

600

6.5

26

±30

125

–55 to 150

300

V

A

A

V

W

°C

Drain – Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate – Source Leakage Current

Gate Threshold Voltage

600

4.7

1.30

250

1000

±100

24

V

A

Ω

µA

nA

V

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Pulse Test: Pulse Width < 380

µS , Duty Cycle < 2%

BFC63

LAB

SEME

600V

6.5A

1.30

Ω

Ω

4TH GENERATION MOSFET

Pin 1 — Gate

Pin 2 — Drain

Pin 3 — Source