BAS70 datasheet(1/1 Pages) TEL

номер детали	BAS70

подробное описание детали	SCHOTTKY DIODE

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производитель	TEL [TRANSYS Electronics Limited]

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BAS70-04-05-06 SCHOTTKY DIODE

FEATURES

Power dissipation

PD:

200

mW (Tamb=25

℃)

Collector current

IF:

200

mA

Collector-base voltage

VR:

70

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

BAS70 Marking: 73

BAS70-04 Marking: 74

BAS70-05 Marking: 75

BAS70-06 Marking: 76

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Reverse breakdown voltage

V(BR) R

IR= 10µA

70

V

Reverse voltage

leakage current

IR

VR=50V

100

nA

Forward

voltage

VF

IF=1mA

IF=15mA

410

1000

mV

Diode

capacitance

CD

VR=0V,f=1MHz

2

pF

Reveres recovery time

trr

IF=10mA through IR=10mA

to IR=1mA

5

nS

Unit: mm

SOT-23

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