2SA950 datasheet(1/1 Pages) TEL

номер детали	2SA950

подробное описание детали	Plastic-Encapsulated Transistors

PDF	1 Pages

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производитель	TEL [TRANSYS Electronics Limited]

домашняя страница	http://www.transyselectronics.com

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TO-92 Plastic-Encapsulated Transistors

2SA950

TRANSISTOR (PNP)

FEATURE

Power dissipation

PCM : 0.6 W (Tamb=25

℃)

Collector current

ICM :

-0.8

A

Collector-base voltage

V(BR)CBO : -35 V

Operating and storage junction temperature range

Tj, Tstg:

-55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= -1mA , IE=0

-35

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -10 mA , IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -1Ma, IC=0

-5

V

Collector cut-off current

ICBO

VCB= -35V, IE=0

-0.1

µA

Emitter cut-off current

IEBO

VEB= -5V, IC=0

-0.1

µA

hFE(1)

VCE=-1V, IC=-100mA

100

320

DC current gain

hFE(2)

VCE=-1V, IC= -700mA

35

Collector-emitter saturation voltage

VCE(sat)

IC= -500mA, IB= -20mA

-0.7

V

Collector Output Capacitance

Cob

VCB=-10V, IE=0

f=1MHZ

19

pF

Transition frequency

f T

VCE=-5V, IC=-10mA,

120

MHz

CLASSIFICATION OF hFE(1)

Rank

O

Y

Range

100-200

160-320

1 2 3

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

Transys

Electronics

LI M ITE D

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