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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CY20AAJ-8F датащи(PDF) 2 Page - Powerex Power Semiconductors |
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CY20AAJ-8F датащи(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 2 page  MITSUBISHI IGBT CY20AAJ-8F Nch IGBT for STROBE FLASHER Sep. 2000 Vtrig TRIGGER SIGNAL VG IGBTE GATE VOLTAGE IXE Xe TUBE CURRENT RG VCE VCM CM Vtrig VG IGBT IXe + – 0 40 80 120 160 08 246 CM = 400 µF GATE-EMITTER VOLTAGE VGE (V) — — 10 ±10 1.5 — — — — — 450 ±8 — — — IC = 1mA, VGE = 0V IG = ±100µA, VCE = 0V VCE = 400V, VGE = 0V VGE = ±6V, VCE = 0V VCE = 10V, IC = 1mA ELECTRICAL CHARACTERISTICS (Tj = 25 °C) V (BR) CES V (BR) GES ICES IGES VGE (th) V V µA µA V Collector-emitter breakdown voltage Gate-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Symbol Unit Parameter Test conditions Limits Min. Typ. Max. Figure1. MAXIMUM PULSE COLLECTOR CURRENT APPLICATION EXAMPLE |
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