TLC2801Z, TLC2801Y

Advanced LinCMOS

™ LOW-NOISE PRECISION

OPERATIONAL AMPLIFIERS

SLOS116B – JULY 1982 – REVISED SEPTEMBER 1996

3–8

POST OFFICE BOX 655303

PARAMETER MEASUREMENT INFORMATION

2 k

Ω

VDD –

VO

20

Ω

20

Ω

–

+

10 k

Ω

VDD +

VDD –

VO

100

Ω

–

+

VI

CL

RL

(see Note A)

NOTE A: CL includes fixture capacitance.

VDD +

Figure 1. Noise-Voltage Test Circuit

Figure 2. Phase-Margin Test Circuit

VDD +

VDD –

VO

–

+

CL

RL

(see Note A)

VI

VDD +

VDD –

VO

–

+

NOTE A: CL includes fixture capacitance.

Ground shield

Picoammeters

Figure 3. Slew-Rate Test Circuit

Figure 4. Input-Bias and Offset-

Current Test Circuit

typical values

Typical values as presented in this data sheet represents the median (50% point) of device parametric

performance.

input bias and offset current

At the picoamp bias-current level typical of the TLC2801, accurate measurement of the bias current becomes

difficult. Not only does this measurement require a picoammeter, but test socket leakages can easily exceed

the actual device bias currents. To measure these small currents, Texas Instruments uses a two-step process.

The socket leakage is measured using picoammeters with bias voltage applied but with no device in the socket.

The device is then inserted in the socket and a second test measuring both the socket leakage and the device

input bias current is performed. The two measurements are then subtracted algebraically to determine the bias

current of the device.