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8/10/2005

Page 2

ELECTRICAL CHARACTERISTICS (Per Diode)

Parameter

Symbol

Min

Units

Breakdown Voltage (Note 1)

Tj = 25°C Unless otherwise noted

Conditions

Typ

Max

BR

I

=

Forward Voltage (Note 1)

I

=

I

=

F

F

Reverse Leakage Current (Note 1)

V =

Total Capacitance

0Vdc Bias, f =1 MHz

Reverse Recovery Time

(See Figure 1)

trr

I = 10mA, I = 10mA

R = 100 Ohms;

measured at I

= 1mA

F

R

L

10uA

1.0mA

10mA

25V

40

-

-

V

-

-

380

--

500

mV

-

1.0

uA

-

5.0

pF

--

-

5.0

ns

-

+1 0 V

50 Ω O u t put

Pu ls e

Ge n e r a t o r

50 Ω In p u t

Sa m p lin g

O scillo s co p e

DUT

?

82 0 Ω

2. 0 k Ω

0. 1 µ F

I

F

10 0 µ H

0. 1 µ F

+1 0 V

50 Ω O u t put

Pu ls e

Ge n e r a t o r

50 Ω In p u t

Sa m p lin g

O scillo s co p e

DUT

?

82 0 Ω

2. 0 k Ω

0. 1 µ F

I

F

10 0 µ H

0. 1 µ F

Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT

Note 1. Short duration pulse to minimize self-heating effect

Rrec

BAS40TW/ADW/CDW/SDW/RDW

I

=

F

40mA

-

-

1000