TMS28F008AXY datasheet(2/52 Pages) TI

2 / 52 page

TMS28F008Axy,TMS28F800Axy

1 048 576 BY 8-BIT/524 288 BY 16-BIT

AUTO-SELECT BOOT-BLOCK FLASH MEMORIES

SMJS851A – NOVEMBER 1997 – REVISED MARCH 1998

POST OFFICE BOX 1443

• HOUSTON, TEXAS 77251–1443

description

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device symbol nomenclature

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logic symbol for TMS28F008Axy 40-pin package

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logic symbol for TMS28F800Axy 44-pin package

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logic symbol for TMS28F800Axy 48-pin package

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functional block diagram

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architecture

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block memory maps

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boot-block data protection

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parameter block

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main block

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data protection

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command-state machine (CSM)

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operation

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command definition

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status register

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byte-wide or word-wide mode selection

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command-state machine (CSM) operations

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clear status register

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read operations

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programming operations

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erase operations

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automatic power-saving mode

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reset / deep power-down mode

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absolute maximum ratings

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recommended operating conditions

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word/byte typical write and block-erase performance

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electrical characteristics

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power-up and reset switching characteristics for

TMS28F008ASy or ’AEy and

TMS28F800ASy or ’AEy

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power-up and reset switching characteristics for

TMS28F008AVy or ’ALy and

TMS28F800AVy or ’ALy

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power-up and reset switching characteristics for

TMS28F008AZy and TMS28F800AZy

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Parameter Measurement Information

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mechanical data

DBJ (R-PDSO-G44)

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mechanical data

DCD (R-PDSO-G**)

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Table of Contents

description

The TMS28F800Axy is a 8 388 608-bit, boot-block flash memory that can be electrically block-erased and

reprogrammed. The TMS28F800Axy is organized in a blocked architecture consisting of:

D One 16K-byte/8K-word protected boot block

D Two 8K-byte/4K-word parameter blocks

D One 96K-byte/48K-word main block

D Seven 128K-byte/64K-word main blocks

The device can be ordered in four different voltage configurations (see Table 1). Operation as a 1024K-byte

(8-bit) or a 512K-word (16-bit) organization is user-definable.

Embedded program and block-erase functions are fully automated by the on-chip write-state machine (WSM),

simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status

can be monitored by an on-chip status register to determine progress of program/erase tasks. The device

features user-selectable block erasure.

The TMS28F800AEy configuration allows the user to perform memory reads using 2.7–3.6-V VCC and 5-V VCC

for optimum power consumption. Erasing or programming the device can be accomplished with VPP = 3 V,

5 V, or 12-V. This configuration is offered in the commercial temperature range (0

°C to 70°C) and the extended

temperature range (–40

°C to 85°C). Also, TMS28F800ASy offers VCC = 3 – 3.6 V and VCC = 5 V for optimum

power consumption. The TMS28F800ALy configuration allows performance of memory reads using

VCC = 3.0 – 3.6 V for optimum power consumption. The TMS28F800AVy configuration allows performance of

memory reads using VCC = 2.7–3.6 V for optimum power consumption.

The TMS28F800AZy configuration offers a 5-V memory read with a 3-V/5-V/12-V program and erase. This

configuration is offered in three temperature ranges: 0

°C to 70°C, – 40°C to 85°C, – 40°C to 125°C.

The TMS28F800Axy is offered in a 44-pin plastic small-outline package (PSOP) and a 48-pin thin small-outline

package (TSOP) organized as 16-bit or 8-bit.

The TMS28F008 is functionally equivalent to the ’F800 except that it is organized only as a 8-bit configuration,

and it is offered only in a 40-pin TSOP.

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