VIPER53EDIP-E datasheet(4/31 Pages) STMICROELECTRONICS

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Electrical characteristics

VIPer53EDIP - E / VIPer53ESP - E

4/31

DocRev1

Electrical characteristics

TJ = 25°C, VDD = 13V, unless otherwise specified

Table 3.

Power section

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source

Voltage

ID = 1mA; VCOMP = 0V

620

IDSS

Off State Drain

Current

VDS = 500V; VCOMP = 0V; Tj = 125°C

150

µA

RDS(on)

Static Drain-Source

On State Resistance

ID = 1A; VCOMP = 4.5V; VTOVL = 0V

TJ = 25°C

TJ = 100°C

0.9

1.7

Ω

tfv

Fall Time

ID = 0.2A; VIN = 300V

(1)

On clamped inductive load

100

trv

Rise Time

ID = 1A; VIN = 300V

(1)

Coss

Drain Capacitance

VDS = 25V

170

CEon

Effective Output

Capacitance

200V < VDSon < 400V

(2)

This parameter can be used to compute the energy dissipated at turn on Eton according to the initial drain

to source voltage VDSon and the following formula:

Table 4.

Oscillator Section

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

FOSC1

Oscillator Frequency

Initial Accuracy

RT = 8kΩ; CT = 2.2nF

Figure 15 on page 23

100

105

kHz

FOSC2

Oscillator Frequency

Total Variation

RT = 8kΩ; CT = 2.2nF

Figure 17 on page 24

VDD = VDDon ... VDDovp;

TJ = 0 ... 100°C

100

107

kHz

VOSChi

Oscillator Peak

Voltage

VOSClo

Oscillator Valley

Voltage

to n

--- CEon 300

DSon

300

----------------

⎝⎠

⎛⎞

1.5

⋅⋅

⋅

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