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M48T35AY датащи(PDF) 14 Page - STMicroelectronics

номер детали M48T35AY
подробное описание детали  5.0 or 3.3V, 256 Kbit (32 Kb x8) TIMEKEEPER짰 SRAM
PDF  25 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48T35AY датащи(HTML) 14 Page - STMicroelectronics

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VCC Noise And Negative Going Transients
ICC transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the VCC bus. These transients
can be reduced if capacitors are used to store en-
ergy which stabilizes the VCC bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A bypass ca-
pacitor value of 0.1µF (as shown in Figure 13) is
recommended in order to provide the needed fil-
tering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on VCC that drive it to values
below VSS by as much as one volt. These negative
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from VCC to VSS (cathode
connected to VCC, anode to VSS). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
Figure 13. Supply Voltage Protection
AI02169
VCC
0.1
µF
DEVICE
VCC
VSS



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