Features

Comchip Technology CO., LTD.

RoHS Device

Halogen Free

SMD ESD Protection Diode

High-Reliability and High-Performance

REV:A

Page 1

AQW-G7075

- Low leakage current.

- Uni-directional ESD protection.

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Conditions

Peak pulse power

PPP

W

Operating temperature range

Tj

°C

Storage temperature range

TSTG

°C

ESD

kV

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD capability

Peak pulse current

IPP

A

TP = 8/20µs

TP = 8/20µs

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

Breakdown voltage

VBR

V

IT = 2µA

Reverse leakage current

IR

nA

VRWM = 3.3V

Clamping voltage

VC

V

IPP = 1A, TP = 8/20µs

V

Working peak reverse voltage

VRWM

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

3.3

3.5

500

9

IPP = 7A, TP = 8/20µs

VC

7

-55 to +125

-55 to +150

±30

7

5

11

9

77

ACPDUC3V3UP-HF

- Low clamping voltage.

Dimensions in inches and (millimeter)

0603C/SOD-523F

0.071(1.80)

0.063(1.60)

0.039(1.00)

0.031(0.80)

0.022(0.55)

0.018(0.45)

0.001(0.02)

Max.

0.022(0.55)

0.016(0.40)

0.043(1.10)BSC

0.030(0.75)

0.026(0.65)

Circuit Diagram

- Mounting position: Any.

Mechanical data

- Polarity: Indicated by cathode band.

- Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

- Case: 0603C/SOD-523F package,

molded plastic.

Forward voltage

VF

IF = 10mA

V

1.2

- AEC-Q101 Qualified & PPAP.

Breakdown voltage

VBR

V

IT = 50mA

2.8