ACPDUC1V8HT-HF

Comchip Technology CO., LTD.

RoHS Device

Halogen Free

Circuit Diagram

SMD ESD Protection Diode

Features

- Bi-directional ESD protection.

- Low leakage current.

- Low clamping voltage.

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

Breakdown voltage

VBR

V

IT = 1mA

Reverse leakage current

IR

µA

VRWM = 1.8V

0.1

V

Working peak reverse voltage

VRWM

Clamping voltage

V

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

IPP = 5A, TP = 8/20µs

3.5

8.0

VC

VC

IPP = 20A, TP = 8/20µs

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Conditions

Peak pulse power

PPP

W

160

Operating temperature range

Tj

°C

Storage temperature range

TSTG

°C

kV

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD capability

-55 to +150

Peak pulse current

IPP

A

TP = 8/20µs

20

TP = 8/20µs

±30

ESD

-55 to +150

4.0

5.0

REV:A

Page 1

AQW-G7069

2.3

1.8

35

45

Dimensions in inches and (millimeter)

0603C/SOD-523F

0.071(1.80)

0.063(1.60)

0.039(1.00)

0.031(0.80)

0.022(0.55)

0.018(0.45)

0.001(0.02)

Max.

0.022(0.55)

0.016(0.40)

0.043(1.10)BSC

0.030(0.75)

0.026(0.65)

High-Reliability and High-Performance

Mechanical data

- Case: 0603C/SOD-523F standard package,

molded plastic.

- Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

- Mounting position: Any.

- AEC-Q101 Qualified & PPAP.