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ST10F273 датащи(PDF) 153 Page - STMicroelectronics |
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ST10F273 датащи(HTML) 153 Page - STMicroelectronics |
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153 / 179 page ![]() ST10F273 Electrical characteristics 153/179 The given values of CA do not include the stray capacitance of the package and of the printed circuit board: the negative resistance values are calculated assuming additional 5pF to the values in the table. The crystal shunt capacitance (C0), the package and the stray capacitance between XTAL1 and XTAL2 pins is globally assumed equal to 4pF. The external resistance between XTAL1 and XTAL2 is not necessary, since already present on the silicon. 24.8.12 32 kHz oscillator specifications VDD = 5V ± 10%, VSS = 0V, TA = –40°C to +125°C Figure 46. 32 kHz crystal oscillator connection diagram The given values of CA do not include the stray capacitance of the package and of the printed circuit board: the negative resistance values are calculated assuming additional 5pF to the values in the table. The crystal shunt capacitance (C0) and the package capacitance between XTAL3 and XTAL4 pins is globally assumed equal to 4pF. The external resistance between XTAL3 and XTAL4 is not necessary, since already present on the silicon. Table 74. 32 kHz oscillator characteristics Symbol Parameter Conditions Value Unit Min. Typ. Max. gm32 Oscillator transconductance(1) 1. At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started, the current biasing is reduced to lower the power consumption of the system. Start-up 20 31 50 µA/V Normal run 8 17 30 VOSC32 Oscillation amplitude(2) 2. Not 100% tested, guaranteed by design characterization. Peak to peak 0.5 1.0 2.4 V VAV32 Oscillation voltage level (2) Sine wave middle 0.7 0.9 1.2 tSTUP32 Oscillator start-up time (2) Stable VDD –15 s Table 75. Minimum values of negative resistance (module) for 32 kHz oscillator CA = 6pF CA = 12pF CA = 15pF CA = 18pF CA = 22pF CA = 27pF CA = 33pF 32 kHz - - - - 150 k Ω 120 k Ω 90 kW CA CA crystal ST10F273 |
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