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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2N5664 датащи(PDF) 2 Page - Semicoa Semiconductor |
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2N5664 датащи(HTML) 2 Page - Semicoa Semiconductor |
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2 / 2 page  Copyright 2002 Semicoa Semiconductors, Inc. Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com 2N5664 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Collector-Emitter Breakdown Voltage V(BR)CER IC = 10 µA, RBE = 100 Ω 250 Volts Emitter-Base Breakdown Voltage V(BR)EBO IE = 10 µA 6 Volts Collector-Base Cutoff Current ICBO1 VCB = 200 Volts 100 nA Collector-Emitter Cutoff Current ICES1 ICES1 VCE = 200 Volts VCE = 200 Volts, TA = 150°C 200 100 nA µA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol Test Conditions Min Typ Max Units DC Current Gain hFE1 hFE2 hFE3 hFE4 hFE5 IC = 0.5 A, VCE = 2 Volts IC = 1 A, VCE = 5 Volts IC = 3 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts IC = 1 A, VCE = 5 Volts TA = -55°C 40 40 15 5 15 120 Base-Emitter Saturation Voltage VBEsat1 VBEsat2 IC = 3 A, IB = 300 mA IC = 5 A, IB = 1 A 1.2 1.5 Volts Collector-Emitter Saturation Voltage VCEsat1 VCEsat2 IC = 3 A, IB = 300 mA IC = 5 A, IB = 1 A 0.4 1.0 Volts Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE| VCE = 5 Volts, IC = 500 mA, f = 10 MHz 2 7 Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz 120 pF Switching Characteristics Parameter Symbol Test Conditions Min Typ Max Units Turn-On Time tON IC = 1 A, VCC = 100 Volts 0.25 µs Turn-Off Time tOFF IC = 1 A, VCC = 100 Volts 1.5 µs |
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