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SEP-30-2004
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2804BVG
SOP-8
Lead-Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise
Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
±20
V
TC = 25 °C
7.5
Continuous Drain Current
TC = 100 °C
ID
6.5
Pulsed Drain Current
1
IDM
20
A
TC = 25 °C
2.5
Power Dissipation
TC = 100 °C
PD
1.3
W
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
Lead Temperature (
1/
16” from case for 10 sec.)
TL
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient
RθJA
50
°C / W
1Pulse width limited by maximum junction temperature.
2Duty cycle
≤ 1％
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250µA
40
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
1
1.5
2.5
V
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±20V
±250
nA
VDS = 32V, VGS = 0V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 30V, VGS = 0V, TC = 125 °C
10
µA
On-State Drain Current
1
ID(ON)
VDS = 10V, VGS = 10V
20
A
VGS = 4.5V, ID = 6.5A
30
42
Drain-Source On-State
Resistance
1
RDS(ON)
VGS = 10V, ID = 7.5A
21
28
mΩ
Forward Transconductance
1
gfs
VDS = 10V, ID = 7.5A
19
S
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
40V
28mΩ
7.5A
G
D
S
4
:GATE
5,6,7,8 :DRAIN
1,2,3
:SOURCE
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