ESH1DMH

Taiwan Semiconductor

3

Version: B2110

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Fig.1 Forward Current Derating Curve

Fig.2 Maximum Non-Repetitive Forward Surge Current

Fig.3 Typical Reverse Characteristics

Fig.4 Typical Forward Characteristics

Fig.5 Reverse Recovery Time Characteristic and Test Circuit Diagram

0

1

2

25

50

75

100

125

150

0

5

10

15

20

1

10

100

8.3ms single half sine wave

0.0001

0.001

0.01

0.1

1

10

10 20 30 40 50 60 70 80 90 100

T

J=25°C

T

J=125°C

0.1

1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

Pulse width 300μs

1% duty cycle

T

J=25°C

T

J=125°C

LEAD TEMPERATURE (°C)

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

0.001

0.01

0.1

1

10

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

Pulse width

T

J=25°C

T

J=125°C

UF1DLW

FORWARD VOLTAGE (V)

NUMBER OF CYCLES AT 60 Hz