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SC2440 датащи(PDF) 13 Page - Semtech Corporation |
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SC2440 датащи(HTML) 13 Page - Semtech Corporation |
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13 / 26 page ![]() 13 © 2005 Semtech Corp. www.semtech.com SC2440 POWER MANAGEMENT Applications Information results from the ESR of the output capacitor while the second term is due to the charging and discharging of C OUT by the inductor ripple current. Substituting ∆IL = 0.6A, f = 1MHz and C OUT = 10µF ceramic with ESR = 3mΩ in (7), mV 3 . 9 mV 5 . 7 mV 8 . 1 ) m 5 . 12 m 3 ( A 6 . 0 VOUT = + = Ω + Ω ⋅ = ∆ Depending on operating frequency and the type of capacitor, ripple voltage resulting from charging and discharging of C OUT may be higer than that due to ESR. A 10µF or 22µF X5R ceramic capacitor is found adequate for output filtering in most applications. Ripple current in the output capacitor is not a concern because the inductor current of a buck converter directly feeds C OUT, resulting in very low ripple current. Avoid using Z5U and Y5V ceramic capacitors for output filtering because these types of capacitors have high temperature and high voltage coefficients. Freewheeling Diode Use of Schottky barrier diodes as freewheeling rectifiers reduces diode reverse recovery input current spikes, easing high-side current sensing in the SC2440. These diodes should have a RMS current rating between 1A and 2A and a reverse blocking voltage of at least 5V higher than the input voltage. For switching regulators operating at low duty cycles (i.e. low output voltage to input voltage conversion ratios), it is beneficial to use freewheeling diodes with somewhat higher RMS current ratings (thus lower forward voltages). This is because the diode conduction interval is much longer than that of the transistor. Converter efficiency will be improved if the voltage drop across the diode is lower. The freewheeling diodes should be placed close to the SW pins of the SC2440 to minimize ringing due to trace inductance. Surface-mount equivalents of 1N5817 and 1N5819, MBRM120LT3 (ON Semi), UPS120 and UPS140 (Micro-Semi) are all suitable. Bootstrapping the Power Transistors To maximize efficiency, the turn-on voltage across the internal power NPN transistors should be minimized. If these transistors are to be driven into saturation, then their bases will have to be driven from a power supply higher in voltage than V IN. The required driver supply voltage (at least 2.5V higher than the SW voltage over the industrial temperature range) is generated with a bootstrap circuit (the diode D BST and the capacitor CBST in Figure 8). The bootstrapped output (the common node between D BST and CBST) is connected to the BOOST pin of the SC2440. The power transistor in the SC2440 is first switched on to build up current in the inductor. When the transistor is switched off, the inductor current pulls the SW node low, allowing C BST to be charged through D BST. When the power switch is again turned on, the SW voltage goes high. This brings the BOOST voltage to BST C SW V V + , thus back-biasing D BST. CBST voltage increases with each subsequent switching cycle, as does the bootstrapped voltage at the BOOST pin. After a number of switching cycles, C BST will be fully charged to a voltage approximately equal to that applied to the anode of D BST. Figure 7 shows the typical minimum BOOST to SW voltage required to fully saturate the power transistor. This differential voltage ( BST C V = ) must be at least 1.8V at room temperature. This is also specified in the “Electrical Characteristics” as “Minimum Bootstrap Voltage”. The minimum required V CBST increases as temperature decreases. The bootstrap circuit reaches equilibrium when the base charge drawn from C BST during transistor on time is equal to the charge replenished during the off interval. Figure 7. Typical Minimum Bootstrap Voltage Re- quired to Maintain Saturation at I SW = 2A. Minimum Bootstrap Voltage vs Temperature 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 Temperature (°C) |
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