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M48T201V датащи(PDF) 28 Page - STMicroelectronics |
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M48T201V датащи(HTML) 28 Page - STMicroelectronics |
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28 / 35 page ![]() DC and AC parameters M48T201Y, M48T201V 28/35 Table 13. DC characteristics Sym Parameter Test condition(1) 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted). M48T201Y M48T201V Unit –70 –85 Min Typ Max Min Typ Max ILI (2) 2. RSTIN1 and RSTIN2 internally pulled-up to VCC through 100KΩ resistor. WDI internally pulled-down to VSS through 100K Ω resistor. Input Leakage Current 0V ≤ VIN ≤ VCC ±1 ±1 µA ILO (3) 3. Outputs deselected. Output Leakage Current 0V ≤ VOUT ≤ VCC ±1 ±1 µA ICC Supply Current Outputs open 8 15 4 10 mA ICC1 Supply Current (Standby) TTL E = VIH 53 mA ICC2 Supply Current (Standby) CMOS E = VCC –0.2 3 2 mA IBAT Battery Current OSC ON VCC = 0V 575 800 575 800 nA Battery Current OSC OFF 100 100 nA VIL Input Low Voltage –0.3 0.8 –0.3 0.8 V VIH Input High Voltage 2.2 VCC + 0.3 2.0 VCC + 0.3 V VOL Output Low Voltage IOL = 2.1mA 0.4 0.4 V Output Low Voltage (open drain)(4) 4. For IRQ/FT & RST pins (Open Drain). IOL = 10mA 0.4 0.4 V VOH Output High Voltage IOH = –1.0mA 2.4 2.4 V VOHB (5) 5. Conditioned outputs (ECON - GCON) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage currents will reduce battery life. VOH Battery Back-up IOUT2 = –1.0µA 2.0 3.6 2.0 3.6 V IOUT1 (6) 6. External SRAM must match TIMEKEEPER SUPERVISOR chip VCC specification. VOUT Current (Active) VOUT1 > VCC –0.3 100 70 mA IOUT2 VOUT Current (Battery Back-up) VOUT2 > VBAT –0.3 100 100 µA VPFD Power-fail Deselect Voltage 4.1 4.35 4.5 2.7 2.9 3.0 V VSO Battery Back-up Switchover Voltage 3.0 VPFD – 100mV V VBAT Battery Voltage 3.0 3.0 V |
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