IRFZ44ZPBF datasheet(1/13 Pages) IRF

номер детали	IRFZ44ZPBF

подробное описание детали	HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 13.9m廓 , ID = 51A )

PDF	13 Pages

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производитель	IRF [International Rectifier]

домашняя страница	http://www.irf.com

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06/07/04

www.irf.com

1

HEXFET® is a registered trademark of International Rectifier.

IRFZ44ZPbF

IRFZ44ZSPbF

IRFZ44ZLPbF

HEXFET® Power MOSFET

S

D

G

VDSS = 55V

RDS(on) = 13.9mΩ

ID = 51A

Features

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

AUTOMOTIVE MOSFET

PD - 95379

Description

Specifically designed for Automotive applica-

tions, this HEXFET® Power MOSFET utilizes the

latest processing techniques to achieve extremely

low on-resistance per silicon area. Additional

features of this design are a 175°C junction

operating temperature, fast switching speed and

improved repetitive avalanche rating . These

features combine to make this design an ex-

tremely efficient and reliable device for use in

Automotive applications and a wide variety of

other applications.

D2Pak

IRFZ44ZS

TO-220AB

IRFZ44Z

TO-262

IRFZ44ZL

Absolute Maximum Ratings

Parameter

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

A

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V (See Fig. 9)

IDM

Pulsed Drain Current

c

PD @TC = 25°C

Maximum Power Dissipation

W

Linear Derating Factor

W/°C

VGS

Gate-to-Source Voltage

V

EAS

Single Pulse Avalanche Energy (Thermally Limited)

d

mJ

EAS (tested)

Single Pulse Avalanche Energy Tested Value

i

IAR

Avalanche Current

c

A

EAR

Repetitive Avalanche Energy

h

mJ

TJ

Operating Junction and

°C

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

1.87

°C/W

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

RθJA

Junction-to-Ambient

–––

62

RθJA

Junction-to-Ambient (PCB Mount, steady state)

j

–––

40

Max.

51

36

200

10 lbf•in (1.1N•m)

80

0.53

± 20

86

105

See Fig.12a,12b,15,16

300 (1.6mm from case )

-55 to + 175

Аналогичный номер детали - IRFZ44ZPBF

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRFZ44ZPBF	387Kb / 12P	ADVANCED PROCESS TECHNOLOGY
International Rectifier	IRFZ44ZPBF	387Kb / 12P	ADVANCED PROCESS TECHNOLOGY

More results

Аналогичное описание - IRFZ44ZPBF

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRFZ44Z	333Kb / 12P	Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A)
	IRFZ46N	190Kb / 9P	HEXFET짰 Power MOSFET(VDSS = 55V,RDS(on) = 16.5m廓,ID = 53A)
	IRLZ44ZPBF	362Kb / 13P	AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A)
	IRF7342PBF	159Kb / 7P	HEXFET짰 Power MOSFET (VDSS = -55V , RDS(on) = 0.105廓)
	IRLZ34NSPBF	297Kb / 11P	HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035廓 , ID = 30A )
	IRF1405ZPBF	812Kb / 13P	AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A )
	IRF1407SPBF	258Kb / 12P	HEXFET짰 Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )
	IRFR2905ZPBF	278Kb / 12P	HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 14.5m廓 , ID = 42A )
	IRFR5305PBF	248Kb / 11P	HEXFET짰 Power MOSFET ( VDSS = -55V , RDS(on) = 0.065廓 , ID = -31A )
	IRF1405ZS-7PPBF	696Kb / 12P	HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A )

More results

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Аналогичный номер детали - IRFZ44ZPBF

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