2

TC6320

Symbol

Parameter

Min

Typ

Max

Units

Conditions

BV

DSS

Drain-to-source breakdown voltage

200

-

-

V

V

V

GS(th)

Gate threshold voltage

1.0

-

2.0

V

V

ΔV

GS(th)

Change in V

-

-

-4.5

R

GS

Gate-Source Shunt Resistor

10

-

50

KΩ

I

ΔR

GS

Change in RGS with Temperature

-

-

TBD

VZ

GS

Gate-Source Zener Voltage

13.2

-

25

V

I

ΔVZ

GS

Change in VZGS with Temperature

-

TBD

I

DSS

Zero gate voltage drain current

-

-

10.0

µA

V

-

-

1.0

mA

V

V

I

D(ON)

ON-state drain current

1.0

-

-

A

V

2.0

-

-

V

R

DS(ON)

Static drain-to-source ON-state resis-

tance

-

-

8.0

Ω

V

-

-

7.0

V

ΔR

DS(ON)

Change in R

-

-

1.0

G

FS

Forward transconductance

400

-

-

mmho

V

C

ISS

Input capacitance

-

-

110

pF

V

V

f = 1MHz

C

OSS

Common source output capacitance

-

-

60

C

RSS

Reverse transfer capacitance

-

-

23

t

d(ON)

Turn-ON delay time

-

-

10

ns

V

I

R

t

r

Rise time

-

-

15

t

d(OFF)

Turn-OFF delay time

-

-

20

t

f

Fall time

-

-

15

V

SD

Diode forward voltage drop

-

-

1.8

V

V

t

rr

Reverse recovery time

-

300

-

ns

V

Notes:

1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)

2.All A.C. parameters sample tested.

N- Channel Switching Waveforms and Test Circuit

Pulse

Generator

D.U.T

OUTPUT

10V

0V

0V

V

DD

t

d(OFF)

Input

Output

t

r

t

f

t

d(ON)

t

(ON)

t

(OFF)

10%

90%

90%

10%

90%

10%

Input