Feb.1999

Symbol

Test conditions

Unit

mA

V

V

V

V

V

mA

mA

mA

mA

V

°C/W

V/

µs

Typ.

—

—

—

—

—

—

—

—

—

—

—

—

—

!

@

#

$

!

@

#

$

V2. Measurement using the gate trigger characteristics measurement circuit.

V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.

V4. Mounted on 25mm

× 25mm × t0.7mm ceramic plate with solder.

Test conditions

Voltage

class

8

(V)

400

Unit

V/

µs

Commutating voltage and current waveforms

(inductive load)

Min.

2

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR08AS-8

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

Parameter

Repetitive peak off-state current

On-state voltage

Gate trigger voltage

V2

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltage

1. Junction temperature

°C

2. Rate of decay of on-state commutating current

3. Peak off-state voltage

Limits

Min.

—

—

—

—

—

—

—

—

—

—

0.1

—

V3

Max.

1.0

2.0

2.0

2.0

2.0

2.0

5

5

5

10

—

65

—

7

5

3

2

012

7

5

3

2

345

4

4

23

4

2

23

44

6

8

10

0

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

CONDUCTION TIME

(CYCLES AT 60Hz)

SUPPLY

VOLTAGE

TIME

TIME

TIME

MAIN CURRENT

MAIN

VOLTAGE

(di/dt)c

(dv/dt)c

PERFORMANCE CURVES