TIP121 datasheet(2/2 Pages) DIOTEC

2 / 2 page

TIP120 ... TIP122

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Collector-Emitter saturation volt. – Kollektor-Emitter-Sättigungsspg. 2)

IC = 3 A, IB = 12 mA

IC = 5 A, IB = 20 mA

VCEsat

–

2 V

4 V

Base-Emitter voltage – Basis-Emitter-Spannung 2)

IC = 3 A, VCE = 3 V

VBE

–

2.5 V

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

VCE = 30 V, (B open)

VCE = 40 V, (B open)

VCE = 50 V, (B open)

TIP120

TIP121

TIP122

ICEO

–

500 nA

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 60 V, (E open)

VCB = 80 V, (E open)

VCB = 100 V, (E open)

TIP120

TIP121

TIP122

ICBO

–

200 nA

Collector-Base Capacitance – Kollektor-Basis-Kapazität

CB = 10 V, IE = ie = 0, f = 100 kHz

CB0

–

200 pF

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 63 K/W 1)

Thermal resistance junction to case

Wärmewiderstand Sperrschicht – Gehäuse

RthC

< 3 K/W

Admissible torque for mounting

Zulässiges Anzugsdrehmoment

9 ± 10% lb.in.

1 ± 10% Nm

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

TIP125 ... TIP127

Equivalent Circuit – Ersatzschaltbild

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

http://www.diotec.com/

TIP121 датащи(PDF) 2 Page - Diotec Semiconductor

TIP121 датащи(HTML) 2 Page - Diotec Semiconductor

Html Pages

1 2

датащи скачать

ссылки URL