M58PR256LE datasheet(1/119 Pages) STMICROELECTRONICS

номер детали	M58PR256LE

подробное описание детали	256-Mbit, 512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories

PDF	119 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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1 / 119 page

September 2007

Rev 2

1/119

1

M58PR256LE

M58PR512LE M58PR001LE

256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst)

1.8 V supply Flash memories

Features

■

Supply voltage

–VDD = 1.7 V to 2.0 V for program, erase

and read

–VDDQ = 1.7 V to 2.0 V for I/O buffers

–VPP = 9 V for fast program

■

Synchronous/asynchronous read

– Synchronous burst read mode:

108 MHz, 66 MHz

– Asynchronous page read mode

– Random access: 96 ns

■

Programming time

– 4.2 µs typical word program time using

Buffer Enhanced Factory Program

command

■

Memory organization

– Multiple bank memory array:

32 Mbit banks (256 Mb devices)

64 Mbit banks (512 Mb devices)

128 Mbit banks (1 Gb devices)

– Four EFA (extended flash array) blocks of

64 Kbits

■

Dual operations

– Program/erase in one bank while read in

others

– No delay between read and write

operations

■

Block locking

– All blocks locked at power-up

– Any combination of blocks can be locked

with zero latency

–WP for block lock-down

– Absolute Write protection with VPP = VSS

■

Security

– 64 bit unique device number

– 2112 bit user programmable OTP cells

■

CFI (common Flash interface)

■

100 000 program/erase cycles per block

■

Electronic signature

– Manufacturer code: 20h

– 256 Mbit device: 8818

– 512 Mbit device: 8819

– 1 Gbit device: 880F

The M58PRxxxLE memories are only available as part of a multichip package device.

Wafer

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Аналогичный номер детали - M58PR256LE

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	M58PR256J	842Kb / 114P	256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories 21-Dec-2006
	M58PR256JE96ZB5E	842Kb / 114P	256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories 21-Dec-2006
	M58PR256JE96ZB5F	842Kb / 114P	256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories 21-Dec-2006

More results

Аналогичное описание - M58PR256LE

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	M58LR128HT	844Kb / 112P	128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories 26-Feb-2007
	M58LT128HST	816Kb / 110P	128-Mbit (8 Mb 횞16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories 02-Mar-2007
	M58LT256JST	836Kb / 106P	256 Mbit (16 Mb 횞 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories 27-Jun-2007
	M58PR256J	842Kb / 114P	256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories 21-Dec-2006
Numonyx B.V	M36P0R8070E0	638Kb / 22P	256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
	M58LR128KC	1Mb / 108P	128 or 256 Mbit (x16, mux I/O, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
	M58LR128KT	1Mb / 110P	128 or 256 Mbit (횞16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
	M58LT128HST	1Mb / 110P	128 Mbit (8 Mb 횞16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
	M58LT256JST	1Mb / 108P	256 Mbit (16 Mb 횞 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories
	M58PR512LE	2Mb / 123P	512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories

More results

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