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DN2640 датащи(PDF) 2 Page - Supertex, Inc |
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DN2640 датащи(HTML) 2 Page - Supertex, Inc |
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2 / 2 page ![]() 8-14 Package ID (continuous)* ID (pulsed) Power Dissipation θjc θja IDR*IDRM @ T C = 25°C °C/W °C/W TO-92 250mA 600mA 1.0W 125 170 250mA 600mA * I D (continuous) is limited by max rated Tj. DN2640 Thermal Characteristics 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 0V V DD R gen 0V -10V Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BVDSX Drain-to-Source 400 V VGS = -5V, ID = 1.0mA Breakdown Voltage V GS(OFF) Gate-to-Source OFF Voltage –1.0 –3.5 V V DS = 25V, ID= 10µA ∆VGS(OFF) Change in VGS(OFF) with Temperature 4.5 mV/°CVDS = 25V, ID= 10µA I GSS Gate Body Leakage Current 100 nA V GS = ± 20V, VDS = 0V I D(OFF) Drain-to-Source Leakage Current 10 µAVGS = -10V, VDS = Max Rating 1.0 mA VGS = -10V, VDS = 0.8 Max Rating T A = 125°C IDSS Saturated Drain-to-Source Current 300 mA VGS = 0V, VDS = 25V R DS(ON) Static Drain-to-Source 6.0 Ω V GS = 0V, ID = 150mA ON-State Resistance ∆RDS(ON) Change in R DS(ON) with Temperature 1.1 %/°CVGS = 0V, ID = 150mA G FS Forward Transconductance 300 m I D = 200mA, VDS = 10V CISS Input Capacitance 750 VGS = -10V, VDS = 25V C OSS Common Source Output Capacitance 75 pF f = 1 MHz CRSS Reverse Transfer Capacitance 15 td(ON) Turn-ON Delay Time 15 VDD = 25V, t r Rise Time 20 ns I D = 200mA, td(OFF) Turn-OFF Delay Time 25 RGEN = 10Ω tf Fall Time 25 V SD Diode Forward Voltage Drop 1.8 V V GS = -10V, ISD = 200mA trr Reverse Recovery Time 800 ns VGS = -10V, ISD = 1.0A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) – OBSOLETE – |
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