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MBR230LSFT1 датащи(PDF) 2 Page - ON Semiconductor

номер детали MBR230LSFT1
подробное описание детали  SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 30 VOLTS
PDF  5 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBR230LSFT1 датащи(HTML) 2 Page - ON Semiconductor

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MBR230LSFT1
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
V
Average Rectified Forward Current (At Rated VR, TL = 105°C)
IO
2.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TL = 95°C)
IFRM
4.0
A
Non-Repetitive Peak Surge Current
(Non-Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
40
A
Storage Temperature
Tstg
-55 to 150
°C
Operating Junction Temperature
TJ
-55 to 125
°C
Voltage Rate of Change (Rated VR, TJ = 25°C)
dv/dt
10,000
V/
ms
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Lead (Note 1)
Thermal Resistance, Junction-to-Lead (Note 2)
Thermal Resistance, Junction-to-Ambient (Note 1)
Thermal Resistance, Junction-to-Ambient (Note 2)
Rtjl
Rtjl
Rtja
Rtja
26
21
325
82
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
VF
TJ = 25°C
TJ = 100°C
V
(IF = 1.0 A)
(IF = 2.0 A)
0.38
0.43
0.30
0.37
Maximum Instantaneous Reverse Current (Note 3)
IR
TJ = 25°C
TJ = 100°C
mA
(VR = 30 V)
1.0
25
3. Pulse Test: Pulse Width
≤ 250 ms, Duty Cycle ≤ 2%.



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