MCL4148 datasheet(1/2 Pages) DIOTEC

номер детали	MCL4148

подробное описание детали	Surface Mount Small Signal Diodes

PDF	2 Pages

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производитель	DIOTEC [Diotec Semiconductor]

домашняя страница	http://www.diotec.com

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MCL4148, MCL4448

Surface Mount Small Signal Diodes

Kleinsignal-Dioden für die Oberflächenmontage

Version 2007-09-21

Dimensions - Maße [mm]

Power dissipation

Verlustleistung

500 mW

Repetitive peak reverse voltage

Periodische Spitzensperrspannung

100 V

Glass case Quadro-MicroMELF

Glasgehäuse Quadro-MicroMELF

(LS-31)

Weight approx. – Gewicht ca.

0.01 g

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (TA = 25°C)

Grenzwerte (TA = 25°C)

MCL4148, MCL4448

Power dissipation − Verlustleistung

Ptot

500 mW 1)

Max. average forward current – Dauergrenzstrom (dc)

IFAV

150 mA 1)

Repetitive peak forward current – Periodischer Spitzenstrom

IFRM

300 mA 1)

Non repetitive peak forward surge current

Stoßstrom-Grenzwert

tp ≤ 1 s

tp ≤ 1 µs

IFSM

500 mA 1)

2 A

Reverse voltage – Sperrspannung

VR

75 V

Repetitive peak reverse voltage – Periodische Spitzensperrspannung

VRRM

100 V

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj

TS

-55...+175°C

-55…+175°C

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Forward voltage

Durchlass-Spannung

MCL4148

IF = 50 mA

VF

< 1.0 V

MCL4448

IF = 5 mA

IF = 100 mA

VF

0.62...0.72 V

< 1 V

Leakage current – Sperrstrom 2)

VR = 20 V

VR = 75 V

IR

< 25 nA

< 5 µA

Leakage current – Sperrstrom, Tj = 125°C 2)

VR = 20 V

VR = 75 V

IR

< 30 µA

< 50 µA

Typ. junction capacitance – Typ. Sperrschichtkapazität

VR = 0 V, f = 1 MHz

CT

4 pF

Reverse recovery time – Sperrverzug

IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA

trr

< 4 ns

1

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

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