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CAT521 датащи(PDF) 7 Page - Catalyst Semiconductor

номер детали CAT521
подробное описание детали  Configured Digitally Programmable Potentiometer (DPP??: Programmable Voltage Applications
PDF  13 Pages
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производитель  CATALYST [Catalyst Semiconductor]
домашняя страница  http://www.catalyst-semiconductor.com
Logo CATALYST - Catalyst Semiconductor

CAT521 датащи(HTML) 7 Page - Catalyst Semiconductor

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CAT521
© Catalyst Semiconductor, Inc.
7
Doc. No. MD-2003 Rev. G
Characteristics subject to change without notice
from non-volatile memory to the DPP without using
the external clock.
As data transfers are edge triggered clean clock
transitions are necessary to avoid falsely clocking
data into the control register. Standard CMOS and
TTL logic families work well in this regard and it is
recommended that any mechanical switches used for
breadboarding or device evaluation purposes be
debounced by a flip-flop or other suitable debouncing
circuit.
VREF
VREF, the voltage applied between pins VREFH & VREFL,
sets the DPP’s Zero to Full Scale output range where
VREFL = Zero and VREFH = Full Scale. VREF can span
the full power supply range or just a fraction of it. In
typical applications VREFH & VREFL are connected
across the power supply rails. When using less than
the full supply voltage be mindfull of the limits placed
on VREFH and VREFL as specified in the References
section of DC Electrical Characteristics.
READY/BUSY
¯¯¯¯¯
When saving data to non-volatile memory, the
Ready/Busy ouput (RDY/BSY
¯¯¯¯) signals the start and
duration of the erase/write cycle. Upon receiving a
command to store data (PROG goes high) RDY/BSY
¯¯¯¯
goes low and remains low until the programming cycle is
complete. During this time the CAT521 will ignore any
data appearing at DI and no data will be output on DO.
RDY/BSY
¯¯¯¯ is internally ANDed with a low voltage
detector circuit monitoring VDD. If VDD is below the
minimum value required for EEPROM programming,
RDY/BSY
¯¯¯¯ will remain high following the program
command indicating a failure to record the desired
data in non-volatile memory.
DATA OUTPUT
Data is output serially by the CAT521, LSB first, via
the Data Out (DO) pin following the reception of a
start bit and two address bits by the Data Input (DI).
DO becomes active whenever CS goes high and
resumes its high impedance Tri-State mode when CS
returns low. Tri-Stating the DO pin allows several
521s to share a single serial data line and simplifies
interfacing multiple 521s to a microprocessor.
WRITING TO MEMORY
Programming the CAT521’s non-volatile memory is
accomplished through the control signals: Chip Select
(CS) and Program (PROG). With CS high, a start bit
followed by a two bit DPP address and eight data bits
are clocked into the DPP wiper control register via the
DI pin. Data enters on the clock’s rising edge. The
DPP output changes to its new setting on the clock
cycle following D7, the last data bit.
Programming is accomplished by bringing PROG high
sometime after the start bit and at least 150ns prior to
the rising edge of the clock cycle immediately
following the D7 bit. Two clock cycles after the D7 bit
the DPP wiper control register will be ready to receive
the next set of address and data bits. The clock must
be kept running throughout the programming cycle.
Internal control circuitry takes care of generating and
ramping up the programming voltage for data transfer
to the non-volatile memory cells. The CAT521 non-
volatile memory cells will endure over 1,000,000 write
cycles and will retain data for a minimum of 100 years
without being refreshed.
Figure 1. Writing to Memory
D0
D1
D2
D3
D4
D5
D6
D7
A0
A1
D0
D1
D2
D3
D4
D5
D6
D7
1
NEW DPP DATA
CURRENT DPP DATA
CURRENT
DPP VALUE
NON-VOL ATILE
DPP
OUTPUT
PROG
DO
DI
CS
NEW
DPP VALUE
VOLATILE
NEW
DPP VALUE
NON-VOL ATILE
t
1
2
3
4
5
6
7
8
9
10
11
12
N
N+1 N+2
o
RDY/BSY



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