BC856S datasheet(2/2 Pages) DIOTEC

2 / 2 page

BC856S ... BC859S

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

per transistor – pro Transistor

Min.

Typ.

Max.

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

- IC = 10 mA, - IB = 0.5 mA

- IC = 100 mA, - IB = 5 mA

- VCEsat

–

90 mV

200 mV

250 mV

600 mV

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

- IC = 10 mA, - IB = 0.5 mA

- IC = 100 mA, - IB = 5 mA

- VBEsat

–

700 mV

900 mV

–

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

- VCE = 5 V, - IC = 2 mA

- VCE = 5 V, - IC = 10 mA

- VBE

600 mV

–

650 mV

–

750 mV

820 mV

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 30 V, (E open)

- VCE = 30 V, Tj = 125°C, (E open)

- ICB0

–

15 nA

5 µA

Emitter-Base cutoff current

- VEB = 5 V, (C open)

- IEB0

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

- VCE = 5 V, - IC = 10 mA, f = 100 MHz

100 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

––

6 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEB0

–

10 pF

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 420 K/W 1)

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

BC846S ... BC849S

Pinning – Anschlussbelegung

T1: E1 = 1, C1 = 6, B1 = 2

T2: E2 = 4, C2 = 3, B2 = 5

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

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