BCP56 datasheet(2/2 Pages) DIOTEC

номер детали	BCP56

подробное описание детали	Surface Mount General Purpose Si-Epi-Planar Transistors

PDF	2 Pages

Scroll/Zoom	100%

производитель	DIOTEC [Diotec Semiconductor]

домашняя страница	http://www.diotec.com

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2 / 2 page

BCP54 ... BCP56

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 30 V, (E open)

VCB = 30 V, Tj = 125°C, (E open)

ICB0

–

100 nA

10 µA

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VEB = 5 V, (C open)

IEB0

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

–

130 MHz

–

DC current gain ratio of the complementary pairs

Verhältnis der Stromverstärkungen komplementärer Paare

l IC l = 150 mA, l VCE l = 2 V

hFE1/hFE2

––

1.6

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 93 K/W 1)

Thermal resistance junction to soldering point

Wärmewiderstand Sperrschicht – Lötpad

RthS

< 27 K/W

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCP51 ... BCP53

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

[%]

tot

120

100

[°C]

150

100

Power dissipation versus ambient temperature )

Verlustleistung in Abh. von d. Umgebungstemp. )

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